Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells
Identifieur interne : 015942 ( Main/Repository ); précédent : 015941; suivant : 015943Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells
Auteurs : RBID : Pascal:98-0506345Descripteurs français
- Pascal (Inist)
- 7866F, 7320D, 7361E, 7855C, 7847, 7320H, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Superréseau semiconducteur, Photoluminescence, Spectre résolution temporelle, Déplacement spectral, Rétrécissement raie, Intensité raie, Bande interdite, Emission spontanée, Etat interface, Etat défaut.
English descriptors
- KwdEn :
- Defect states, Energy gap, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Interface states, Line intensity, Line narrowing, Photoluminescence, Semiconductor quantum wells, Semiconductor superlattices, Spectral shift, Spontaneous emission, Time resolved spectra, Wide band gap semiconductors.
Abstract
We have systematically studied the optical properties of InGaN/GaN multiple quantum wells (MQWs) at 10 K under different excitation conditions using photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy. We found that the PL emission consists of a strong main peak at 2.80 eV and a much weaker and broader secondary peak at ∼2.25 eV. We observed that the peak position blueshifts and the spectral width narrows for the main peak when the excitation energies are varied from 3.81 eV (above the band gap of the AlGaN capping layer) to 2.99 eV (below the band gap of the GaN barrier layers). The intensity ratio of the main peak to the secondary peak also varied with excitation energy. The two observed emission peaks originate from different layers of the MQWs. Time-integrated and time-resolved PL revealed that the InGaN-related spontaneous emission processes are strongly affected by inhomogeneity and carrier localization in the MQWs. From these studies under varying excitation energies, we conclude that interface-related defects and roughness may play an important role in the InGaN-related emission mechanism during the carrier transfer between different layers of the MQWs. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells</title><author><name sortKey="Cho, Yong Hoon" uniqKey="Cho Y">Yong-Hoon Cho</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Song, J J" uniqKey="Song J">J. J. Song</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater</wicri:cityArea></affiliation></author><author><name sortKey="Keller, S" uniqKey="Keller S">S. Keller</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Mishra, U K" uniqKey="Mishra U">U. K. Mishra</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0506345</idno><date when="1998-11-30">1998-11-30</date><idno type="stanalyst">PASCAL 98-0506345 AIP</idno><idno type="RBID">Pascal:98-0506345</idno><idno type="wicri:Area/Main/Corpus">015F77</idno><idno type="wicri:Area/Main/Repository">015942</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Defect states</term><term>Energy gap</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Line intensity</term><term>Line narrowing</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Semiconductor superlattices</term><term>Spectral shift</term><term>Spontaneous emission</term><term>Time resolved spectra</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7320D</term><term>7361E</term><term>7855C</term><term>7847</term><term>7320H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Superréseau semiconducteur</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Déplacement spectral</term><term>Rétrécissement raie</term><term>Intensité raie</term><term>Bande interdite</term><term>Emission spontanée</term><term>Etat interface</term><term>Etat défaut</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have systematically studied the optical properties of InGaN/GaN multiple quantum wells (MQWs) at 10 K under different excitation conditions using photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy. We found that the PL emission consists of a strong main peak at 2.80 eV and a much weaker and broader secondary peak at ∼2.25 eV. We observed that the peak position blueshifts and the spectral width narrows for the main peak when the excitation energies are varied from 3.81 eV (above the band gap of the AlGaN capping layer) to 2.99 eV (below the band gap of the GaN barrier layers). The intensity ratio of the main peak to the secondary peak also varied with excitation energy. The two observed emission peaks originate from different layers of the MQWs. Time-integrated and time-resolved PL revealed that the InGaN-related spontaneous emission processes are strongly affected by inhomogeneity and carrier localization in the MQWs. From these studies under varying excitation energies, we conclude that interface-related defects and roughness may play an important role in the InGaN-related emission mechanism during the carrier transfer between different layers of the MQWs. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>73</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>CHO (Yong-Hoon)</s1></fA11><fA11 i1="02" i2="1"><s1>SONG (J. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>KELLER (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>MISHRA (U. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>DENBAARS (S. P.)</s1></fA11><fA14 i1="01"><s1>Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93106</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>3181-3183</s1></fA20><fA21><s1>1998-11-30</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0506345</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have systematically studied the optical properties of InGaN/GaN multiple quantum wells (MQWs) at 10 K under different excitation conditions using photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy. We found that the PL emission consists of a strong main peak at 2.80 eV and a much weaker and broader secondary peak at ∼2.25 eV. We observed that the peak position blueshifts and the spectral width narrows for the main peak when the excitation energies are varied from 3.81 eV (above the band gap of the AlGaN capping layer) to 2.99 eV (below the band gap of the GaN barrier layers). The intensity ratio of the main peak to the secondary peak also varied with excitation energy. The two observed emission peaks originate from different layers of the MQWs. Time-integrated and time-resolved PL revealed that the InGaN-related spontaneous emission processes are strongly affected by inhomogeneity and carrier localization in the MQWs. From these studies under varying excitation energies, we conclude that interface-related defects and roughness may play an important role in the InGaN-related emission mechanism during the carrier transfer between different layers of the MQWs. © 1998 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="06" i2="3"><s0>001B70C20H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7320H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Déplacement spectral</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Spectral shift</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Rétrécissement raie</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Line narrowing</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Intensité raie</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Line intensity</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Emission spontanée</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Spontaneous emission</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Etat défaut</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Defect states</s0></fC03><fN21><s1>327</s1></fN21><fN47 i1="01" i2="1"><s0>9831M000118</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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